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1

High Temperature Graphite Furnace

Operating temperature : ~3000℃

Application:

  1. 3C consumable graphite sheet

  2. EMI shielding sheet

  3. Li battery filler

 

2

Continuous Thermal Process Furnace with Tunnel Type

Operating temperature : ~900℃

Application : Si Material Sintering

System Size: (approx.) 8M L x 3M W x 3M H

 

3

Small Production Furnace with Plate Loading

Operating temperature : ~ 800℃

Application : Carbon Material Sintering

System size: (approx.) 3M L x 1M W x 2M H

 

4

Powder Sintering Furnace

Operating temperature : ~ 900℃

Volume to process powder : 1000Kg /batch

Application :

  1. BN Powder 

  2. AlN x Powder

  3. AlO x Powder

  4. SiO x Powder

Specification :

  1. Layout : 7M L* 5M W * 7M H

  2. Rotation in/output

  3. U/UL by tray

 

5

Lab Type High Temp Furnace

Operating temperature : 2500℃

High quality and excellent performance to price ratio characterizes the lab type furnace, which operates up to 2500°C and offers most complete set of functions required for research labs e.g. ceramics, metallurgy and new innovative applications

System Specification :

  1. Main Body : 1700mmL; 700mmW; 2200mmH

  2. Operating volume size : Φ70mm;120mmH

  3. There are two chambers 

    • Upper chamber is heating zone

    • Lower chamber functions U/UL and cooling area

  4. Sample transfer by lift system

  5. Gast inlet plus

 
 

6

High Temperature Furnace

Operating temperature : 2300℃


Optional : Heat Resistance or Inductance type.

Application :

  1. SiC powders

  2. Quartz ingot

  3. PV crystal ingot

  4. Graphite sintering

7

Vacuum Casting Furnace

Operating Temperature : ~ 900℃

Operating Pressure : <10-2 torr

 

Optional : Heat Resistance or Inductance type.

Product :

  1. Ni, Fe based alloy single crystal & single direction equal axis growth 

Application:

  1. Aerospace material industry

  2. Biotech Ti alloy material

  3. Advance tec. alloy material

鎳基合金單方向晶 

Nickel-based superalloy DS

 

8

Oxide Crystal Growth Furnace

Operating temperature : 2000℃ ~ 2400℃

Optional : Heat Resistance or Inductance type.

Product use :

  1. Sapphire Crystal

  2. LN Ingot

  3. LT Ingot

  4. SiC

 

9

Semi Single Crystal Growth Furnace

Operating temperature : 1400℃ ~1600℃

Application :

  1. 4~8”solar crystal and Semi single crystal